Ion chemistry of tetramethylsilane ( TMS ) by electron impact

A B ST R A C T : We studied electron impact ionization of tetramethylsilane (TMS), Si(CH3)4, which is utilized in plasma polymerization applications, using a semi empirical Jain-Khare theoretical technique. Absolute partial cross sections for the formation of all fragment ions were measured by Jain-Khare method from threshold up to 120 eV. We obtained the following sixteen ions: CH3, Si, SiH, SiH3, SiCH2, SiCH3, HSiCH3, H2SiCH3, SiC2H, SiC2H3, SiC2H5,Si(CH3)2, HSi(CH3)2, Si(CH3)3, HSi(CH3)3 & Si(CH3)4. The agreement between our measured absolute partial ionization cross-sections & R.Basner et al data sets obtained by experimental technique are generally good for the silicon-containing fragment ions. The earlier work done is for 90 eV & here we have extended it up to from threshold to 120 eV.